advanced power n-channel enhancement mode electronics corp. power mosfet capable of 2.5v gate drive bv dss 30v lower on-resistance r ds(on) 40m surface mount package i d 4.8a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 90 /w data and specifications subject to change without notice thermal data parameter parameter rating drain-source voltage 30 gate-source voltage 12 continuous drain current 3 4.8 continuous drain current 3 3.8 pulsed drain current 1 20 total power dissipation 1.39 linear derating factor 0.01 storage temperature range -55 to 150 operating junction temperature range -55 to 150 201019075-1/4 ap2422gy rohs-compliant product a dvanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the 2928-8 j-lead package provides good on-resistance performance and space saving like tsop-6. g2 d2 s2 g1 d1 s1 2928-8 d1 d2 d1 d2 g2 g1 s2 s1
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.02 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =5a - - 32 m v gs =4.5v, i d =4a - - 40 m v gs =2.5v, i d =2a - - 60 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - 1.2 v g fs forward transconductance v ds =5v, i d =4a - 9 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =12v - - 100 na q g total gate charge 2 i d =4a - 8 13 nc q gs gate-source charge v ds =25v - 1.3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4 - nc t d(on) turn-on delay time 2 v ds =15v - 10 - ns t r rise time i d =1a - 11 - ns t d(off) turn-off delay time r g =3.3 ? v gs =5v - 17 - ns t f fall time r d =15 -5- ns c iss input capacitance v gs =0v - 480 770 pf c oss output capacitance v ds =25v - 90 - pf c rss reverse transfer capacitance f=1.0mhz - 70 - pf r g gate resistance f=1.0mhz - 1.5 2.3 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.1a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =4a, v gs =0 v , - 18 - ns q rr reverse recovery charge di/dt=100a/s - 10 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board , t <5 sec ; 155 : /w at steady state. this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. 2/4 ap2422gy this product has been qualified for consumer market. applications or uses as criterial component in life support
ap2422g y fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 0 4 8 12 16 20 01234 v ds , drain-to-source voltage (v) i d , drain current (a) v g = 1.5 v 5.0 v 4.5 v 3.5 v 2.5 v t a =25 o c 0 4 8 12 16 20 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 5.0 v 4.5 v 3.5 v 2.5 v v g = 1.5 v 20 40 60 80 0246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =2a t a =25 : 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =4a v g = 4.5 v 0.0 0.6 1.2 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4/4 ap2422gy q v g 4.5v q gs q gd q g charge 0 3 6 9 12 15 0 5 10 15 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =4a v ds =15v v ds =20v v ds =25v 10 100 1000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 3 6 9 12 15 01234 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =155 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
package outline : 2928-8 millimeters symbols min nom max 2.50 ---- 3.00 2.30 2.40 2.50 2.65 2.85 3.05 0.30 0.45 0.60 0.93 --- 1.10 0.01 --- 0.10 0.92 --- 1.00 2.95 3.05 3.10 0.25 0.32 0.40 0.10 0.15 0.20 e 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : 2928-8 b c 0.65bsc a a1 a2 d e2 l advanced power electronics corp. e e1 a1 a yy2yws part numbe r date code (yws) y last digit of the year w week s sequence e b 1 34 5 6 7 8 2 d e1 e2 a2 e l c
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